Deposition technique and external factors effect on Ge33As12Se55-Si heterostructure mechanical properties

Nicolai D. Savchenko; T. N. Shchurova; M. L. Trunov; A. Kondrat; V. Onopko

doi:10.1117/12.280453

26 August 1997 Deposition technique and external factors effect on Ge₃₃As₁₂Se₅₅-Si heterostructure mechanical properties

Nicolai D. Savchenko, T. N. Shchurova, M. L. Trunov, A. Kondrat, V. Onopko

Author Affiliations +

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280453
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

The effect of the deposition rate, the substrate temperature, the annealing temperature, the laser and high energy electron irradiation on the mechanical stresses for the heterostructure obtained by thermal evaporation of Ge₃₃As₁₂Se₅₅ film onto the crystalline p-Si has been investigated. It has been found that the mechanical stresses are the tensile ones and are in the range between 1 X 10⁷ Pa and 1 X 10⁸ Pa dependent on the film structure related to the deposition technique. Special features of the stresses changes at the deposition rate 6.0 nm/s and the substrate and the annealing temperatures 450 K has been revealed. The results have been interpreted in terms of the topological structural transition associated with the transition from the 2D structure to the 3D one.

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Nicolai D. Savchenko, T. N. Shchurova, M. L. Trunov, A. Kondrat, and V. Onopko "Deposition technique and external factors effect on Ge₃₃As₁₂Se₅₅-Si heterostructure mechanical properties", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280453

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