Rapid and accurate determination of transparency, conductivity, etchability, patternability, and manufacturability of ITO films

D. Bloom; George G. Li; Kai Zhang; A. Rahim Forouhi; Iris Bloomer

doi:10.1117/12.304401

1 April 1998 Rapid and accurate determination of transparency, conductivity, etchability, patternability, and manufacturability of ITO films

D. Bloom, George G. Li, Kai Zhang, A. Rahim Forouhi, Iris Bloomer

Author Affiliations +

Proceedings Volume 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II; (1998) https://doi.org/10.1117/12.304401
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We present a method for the rapid characterization of indium tin oxide (ITO) films. The method determines, from a simple optical measurement, the values of the refractive index (n) and extinction coefficient (k) from 190 to 1100 nm, film thickness, and energy band gap. Also we show that the spectra of the extinction coefficient can be correlated to the film's resistivity. This capability allows the determination of values for the resistivity of ITO films from a very fast and simple optical measurement.

Citation Download Citation

D. Bloom, George G. Li, Kai Zhang, A. Rahim Forouhi, and Iris Bloomer "Rapid and accurate determination of transparency, conductivity, etchability, patternability, and manufacturability of ITO films", Proc. SPIE 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, (1 April 1998); https://doi.org/10.1117/12.304401

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