Paper
27 May 1982 Projections For Short Wavelength Semiconductor Laser Development
William V. Smith
Author Affiliations +
Proceedings Volume 0329, Optical Disk Technology; (1982) https://doi.org/10.1117/12.933385
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
Projections of short wavelength semiconductor laser performance are based primarily on historical charts covering progress in eight different aspects of laser technology. Most of these improvements are common to lasers of all wavelengths, but some may have special relevance to the short wavelength limits. Examples are metal-organic chemical vapor deposition and molecular beam epitaxy methods of crystal growth. However, to date, the short wavelength limits of reliable lasers have been set within the "traditional" technology of liquid phase epitaxy in the GaAlAs materials system. Fairly reliable projections are made in this system to 1985 and less reliable projections beyond 1985 in other III V materials systems. Some discussion of the possibility of lasing at short wavelengths in other material systems is included.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William V. Smith "Projections For Short Wavelength Semiconductor Laser Development", Proc. SPIE 0329, Optical Disk Technology, (27 May 1982); https://doi.org/10.1117/12.933385
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KEYWORDS
Semiconductor lasers

Gallium arsenide

Laser damage threshold

Laser applications

Continuous wave operation

Liquid phase epitaxy

Heterojunctions

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