Negative-type chemically amplified resists for ArF excimer laser lithography

Takuya Naito; Makoto Takahashi; Takeshi Ohfuji; Masaru Sasago

doi:10.1117/12.312364

29 June 1998 Negative-type chemically amplified resists for ArF excimer laser lithography

Takuya Naito, Makoto Takahashi, Takeshi Ohfuji, Masaru Sasago

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312364
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A new negative resist consisting of an anhydride, an acrylic acid, an epoxy crosslinker and a photoacid generator is introduced. In the exposed area, the epoxy groups of the crosslinker react with anhydride groups and/or carboxylic acids in the polymer under existence of photogenerated acid as a catalyst during post exposure baking. A 0.20 micrometers pattern was resolved by an ArF exposure at a dose of 28 mJ/cm².

Citation Download Citation

Takuya Naito, Makoto Takahashi, Takeshi Ohfuji, and Masaru Sasago "Negative-type chemically amplified resists for ArF excimer laser lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312364

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available