MeV ion implantation for modification of electronic, optical, and magnetic materials

Sjoerd Roorda; Francois Schiettekatte; M. Cai; T. Veres; Anna Tchebotareva

doi:10.1117/12.321945

17 September 1998 MeV ion implantation for modification of electronic, optical, and magnetic materials

Sjoerd Roorda, Francois Schiettekatte, M. Cai, T. Veres, Anna Tchebotareva

Proceedings Volume 3413, Materials Modification by Ion Irradiation; (1998) https://doi.org/10.1117/12.321945
Event: Lasers and Materials in Industry and Opto-Contact Workshop, 1998, Quebec, Canada

Abstract

The University of Montreal recently inaugurated a new 1.7 MV Tandem accelerator for materials research. It is being used to study a wide range of topics involving optical, electronic, opto-electronic, and magnetic materials. Current research includes: threshold dose for secondary damage in Si, gettering of impurities in Si by nano-cavities, ion beam mixing of metallic multilayers probed by giant magnetoresistance, tracks and deformations induced by multi- MeV ion beams, and high-resolution radial distribution function of pure amorphous silicon. A selection of recent results is discussed.

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Sjoerd Roorda, Francois Schiettekatte, M. Cai, T. Veres, and Anna Tchebotareva "MeV ion implantation for modification of electronic, optical, and magnetic materials", Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); https://doi.org/10.1117/12.321945

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