Paper
14 July 1998 Asymmetric multiple quantum well lasers and amplifiers
Sergei V. Nalivko, Valerii K. Kononenko, Ivan S. Manak, Victor A. Shevtzov
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Proceedings Volume 3423, Second GR-I International Conference on New Laser Technologies and Applications; (1998) https://doi.org/10.1117/12.316563
Event: Second GR-I International Conference on New Laser Technologies and Applications, 1997, Olympia, Greece
Abstract
Band engineering conception of asymmetric quantum-well (QW) heterostructures widens possibilities to control functional performances of semiconductors lasers and other semiconductor optoelectronic devices. We have analyzed a new type of laser diodes and amplitudes based on asymmetric multiple-QW heterostructures having active layers of different thicknesses and component compositions. For such QW systems, it is possible to change the optical gain spectrum in a wide range and to control the set of definite amplification frequencies due to selecting the width, component composition, and doping of QW and barrier regions.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergei V. Nalivko, Valerii K. Kononenko, Ivan S. Manak, and Victor A. Shevtzov "Asymmetric multiple quantum well lasers and amplifiers", Proc. SPIE 3423, Second GR-I International Conference on New Laser Technologies and Applications, (14 July 1998); https://doi.org/10.1117/12.316563
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KEYWORDS
Quantum wells

Heterojunctions

Polarization

Semiconductor lasers

Optical amplifiers

Waveguides

Control systems

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