Shallow p-type source/drain extension formation using B2H6 plasma doping for deep submicron CMOS

Jerry C. Hu; Robert Kraft; Mark Rodder; Ih-Chin Chen

doi:10.1117/12.323993

4 September 1998 Shallow p-type source/drain extension formation using B₂H₆ plasma doping for deep submicron CMOS

Jerry C. Hu, Robert Kraft, Mark Rodder, Ih-Chin Chen

Proceedings Volume 3506, Microelectronic Device Technology II; (1998) https://doi.org/10.1117/12.323993
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

In this paper, we studied the feasibility of using a commercial etch chamber to perform plasma doping to form shallow p⁺-n junction. The plasma doping has the advantage of high wafer throughput compared to conventional low energy implanters. Ultra-shallow boron implantation was done in a plasma reactor with a Helicon plasma source and a gas mixture of He+B₂H₆. 0.18 micrometer class PMOS devices were fabricated using the plasma doping and compared with devices with a conventional BF₂ S/D extension implant (10 keV BF₂ implant, X_j approximately equals 650 Angstrom). The key results are as follows. (1) Shallow boron implant with good process uniformity on a wafer was achieved using the plasma doping process. Boron dose of approximately 5E14 cm^-2 and junction depth (X_j) of approximately 250 Angstrom was achieved after S/D annealing. (2) The pMOS devices fabricated using the plasma doping have much better short channel effect (SCE) characteristics than the devices fabricated with 10 keV BF₂ implant. The improvement of X_j in the vertical direction of a transistor (from approximately 650 angstrom to approximately 220 angstrom) using the plasma doping resulted in an improvement of approximately 450 angstrom in the lateral direction shown in L_g^min. (3) Degradation in gate-depletion was observed for the plasma doping devices; however, the degradation can be recovered by using an extra gate implant step. (4) Compared to devices with the conventional implant, higher R_sd was found in devices with the plasma doping process. This higher R_sd for the B₂H₆ cases was most likely due to the less gate-to-drain overlap and carbon/oxygen contaminants introduced during the plasma doping process. (5) Higher gate- edge diode leakage was also observed in the plasma doping devices. The high diode leakage was believed also due to the contaminants.

Citation Download Citation

Jerry C. Hu, Robert Kraft, Mark Rodder, and Ih-Chin Chen "Shallow p-type source/drain extension formation using B₂H₆ plasma doping for deep submicron CMOS", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323993

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