Effects of post-treatment for low-dielectric hydrogen silsesquioxane (HSQ)

Ting-Chang Chang; P. T. Liu; M. F. Chou; Ming-Shih Tsai; Simon M. Sze; Chun-Yen Chang; F. Y. Shih; H. D. Huang

doi:10.1117/12.324044

4 September 1998 Effects of post-treatment for low-dielectric hydrogen silsesquioxane (HSQ)

Ting-Chang Chang, P. T. Liu, M. F. Chou, Ming-Shih Tsai, Simon M. Sze, Chun-Yen Chang, F. Y. Shih, H. D. Huang

Proceedings Volume 3508, Multilevel Interconnect Technology II; (1998) https://doi.org/10.1117/12.324044
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Low density materials, such as hydrogen silsesquioxane (HSQ), can offer lower dielectric constants. With HSQ, a low value of K can be achieved if the density of Si-H bonding is maintained at a high level. However, the quality of HSQ films are degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In addition, the thermal stability of as-cured HSQ films are about 400 degrees Celsius. Both leakage current and dielectric constant of HSQ films rapidly increase with increasing annealing temperature. In this work, we have studied the use of hydrogen plasma to improve the quality of HSQ. The leakage current of HSQ decreases as the H₂ plasma treatment time is increased. The role of hydrogen plasma is to passivate the surface of porous HSQ. In addition, the enhancement of the thermal stability of the HSQ film by fluorine ion implantation treatment was investigated. The implantation step can reduce the leakage current of HSQ with high annealing temperature.The enhancement of thermal stability of the HSQ film is due to the film densification by ion implantation treatment.

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Ting-Chang Chang, P. T. Liu, M. F. Chou, Ming-Shih Tsai, Simon M. Sze, Chun-Yen Chang, F. Y. Shih, and H. D. Huang "Effects of post-treatment for low-dielectric hydrogen silsesquioxane (HSQ)", Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); https://doi.org/10.1117/12.324044

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