Paper
18 December 1998 MoSi PSM defect inspection and sensitivity analysis
Jerry Xiaoming Chen, Robert K. Henderson, Franklin D. Kalk
Author Affiliations +
Abstract
The increasing use of MoSi-based attenuated embedded shifter phase shift masks (PSMs) necessitates MoSi defect inspection and classification. The optical properties of MoSi are quite different than conventional Cr-based binary materials, so inspection tool sensitivity to MoSi defects must be characterized. Sensitivity analysis of a KLA 351 with APA algorithm has been performed on both i-line and DUV PSMs with a variety of Verithoro patterns. The programmed defect sizes were measured on a JEOL JWS-7815 SEM that was calibrated with polystyrene latex spheres for defect sizes less than or equal to 0.4 micrometer, yielding a more accurate small defect sensitivity analysis than in the past. Examples of MoSi defect capture and review are also presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry Xiaoming Chen, Robert K. Henderson, and Franklin D. Kalk "MoSi PSM defect inspection and sensitivity analysis", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); https://doi.org/10.1117/12.332816
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KEYWORDS
Scanning electron microscopy

Inspection

Deep ultraviolet

Optical spheres

Particles

Calibration

Photomasks

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