Structural characteristic of GaAIAs multi-epitaxial layer heterostructure

Mei Li; Yi Qu; Xueqian Li; Xingde Zhang

doi:10.1117/12.318245

14 August 1998 Structural characteristic of GaAIAs multi-epitaxial layer heterostructure

Mei Li, Yi Qu, Xueqian Li, Xingde Zhang

Proceedings Volume 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II; (1998) https://doi.org/10.1117/12.318245
Event: Photonics China '98, 1998, Beijing, China

Abstract

GaAlAs/GaAs hetero-epitaxial thin films are prepared by liquid phase epitaxy (LPE) technique. Structural characteristic of the film was Studied by X-ray double crystal rocking curve method. We have measured the rocking curve of (400) reflection and observed the interference fringes. Computer simulation of the experimental curves have been performed with kinematical and dynamical diffraction theory, respectively. We discussed the reason for the appearance of the interference fringe, and calculated structure parameters. The results obtained using dynamical theory is closer to the actual growth parameters.

Citation Download Citation

Mei Li, Yi Qu, Xueqian Li, and Xingde Zhang "Structural characteristic of GaAIAs multi-epitaxial layer heterostructure", Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); https://doi.org/10.1117/12.318245

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available