Analysis of organic contaminants from silicon wafer and disk surfaces by thermal desorption-GC-MS

Mark J. Camenzind; Latif Ahmed; Anurag Kumar

doi:10.1117/12.343711

29 March 1999 Analysis of organic contaminants from silicon wafer and disk surfaces by thermal desorption-GC-MS

Mark J. Camenzind, Latif Ahmed, Anurag Kumar

Proceedings Volume 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays; (1999) https://doi.org/10.1117/12.343711
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Organic contaminants can affect semiconductor wafer processing including gate oxide integrity, polysilicon growth, deep ultraviolet photoresist line-width, and cleaning & etching steps. Organophosphates are known to counter dope silicon wafers. Organic contaminants in disk drives can cause failures due to stiction or buildup on the heads. Therefore, it is important to identify organic contaminants adsorbed on wafer or disk surfaces and find their sources so they can be either completely eliminated or at least controlled. Dynamic headspace TD-GC-MS (Thermal Desorption-Gas Chromatography-Mass Spectrometry) methods are very sensitive and can be used to identify organic contaminants on disks and wafers, in air, or outgassing from running drives or their individual components.

Citation Download Citation

Mark J. Camenzind, Latif Ahmed, and Anurag Kumar "Analysis of organic contaminants from silicon wafer and disk surfaces by thermal desorption-GC-MS", Proc. SPIE 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays, (29 March 1999); https://doi.org/10.1117/12.343711

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