Paper
1 April 1999 Integration of red, infrared, and blue light sources by wafer fusion
Philip D. Floyd, Christopher L. Chua, David W. Treat, David P. Bour
Author Affiliations +
Abstract
In this work, we demonstrate fusion of GaAs-based laser structures to GaN-based light-emitting diode (LED) heterostructures. Successful operation of red and infrared lasers fused to functioning GaN LEDs is achieved. A single heterostructure consisting of AlGaInAs/AlGaAs quantum well (QW) and GaInP/AlGaInP QW laser diode structures was grown by low-pressure organometallic vapor phase epitaxy (OMVPE) on GaAs substrates. The GaN LED structure was grown by OMVPE on an A-face sapphire substrate. The heterostructures were fused at 650 degrees Celsius in an H2 ambient, while under uniaxial pressure. To fabricate the lasers, the GaAs substrate was selectively etched, leaving the red and infrared QW laser stack structure on GaN. Ridge waveguide QW lasers and GaN LEDs were fabricated with the fused epilayers. Infrared, AlGaInAs QW lasers (4 X 500 micrometer), operated with a threshold current (Ith) of 40 mA and external differential quantum efficiency ((eta) d) of 11.5%/facet at about 821 nm. Red, GaInP QW lasers (4 X 500 micrometer), operated with a Ith of 118 mA and (eta) d of 18.7%/facet at about 660 nm. The adjacent InGaN/GaN LED emitted at 446 nm.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philip D. Floyd, Christopher L. Chua, David W. Treat, and David P. Bour "Integration of red, infrared, and blue light sources by wafer fusion", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344532
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light emitting diodes

Gallium nitride

Infrared lasers

Heterojunctions

Quantum wells

Infrared radiation

Gallium arsenide

RELATED CONTENT

1.2μm emitting VECSEL based on type-II aligned QWs
Proceedings of SPIE (March 10 2016)
MOVPE growth for UV-LEDs
Proceedings of SPIE (February 03 2009)
Effects of 5.5 MeV proton irradiation on reliability of a...
Proceedings of SPIE (February 25 1993)
Type II 450 550 nm InGaN GaNAs for quantum well...
Proceedings of SPIE (February 28 2006)
Radiation effect in quantum well optoelectronic devices
Proceedings of SPIE (September 08 1993)

Back to Top