Metal organic vapor phase epitaxy of GaN and lateral overgrowth

Bernard Beaumont; Pierre J. L. Gibart

doi:10.1117/12.344707

8 April 1999 Metal organic vapor phase epitaxy of GaN and lateral overgrowth

Bernard Beaumont, Pierre J. L. Gibart

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344707
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Nitride semiconductor alloys have merged as the most promising materials for short wave lengths light emitting diodes and laser diodes (LDs). The GaInN multiquantum wells structure was used as the active part of LDs and have presently proven to work at room temperature in cw mode for 10,000 hrs. These achievements would have not been possible without the emergence of new approaches in heteroepitaxy of GaN leading to layers exhibiting lower dislocation densities than those grown using conventional heteroepitaxy. Metal Organic Vapor Phase Epitaxy (MOVPE) has demonstrated its ability to fabricate structures for optoelectronics GaN based devices. Several nitrogen sources have been tested, but, so far NH₃ remains the best nitrogen precursor despite the stringent requirement of high V/III ratio in the vapor phase. With the epitaxial lateral overgrowth (ELOG), high quality GaN layers have been obtained. This ELOG technology can be applied either by HVPE or MOVPE, on sapphire or 6H-SiC substrates. The dislocations densities in the overgrowth region are orders of magnitude lower than in the standard heteroepitaxial GaN layers.

Citation Download Citation

Bernard Beaumont and Pierre J. L. Gibart "Metal organic vapor phase epitaxy of GaN and lateral overgrowth", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344707

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