Ring-type ESD damage caused by electrostatic chuck of ion implanter

Mingchu King; Chun-Keng Hsu; Chiang Fu; Hsin-Chie Huang; Shih-Yi Yang; Yuan-Lung Liu; Kuo-chin Hsu

doi:10.1117/12.346916

27 April 1999 Ring-type ESD damage caused by electrostatic chuck of ion implanter

Mingchu King, Chun-Keng Hsu, Chiang Fu, Hsin-Chie Huang, Shih-Yi Yang, Yuan-Lung Liu, Kuo-chin Hsu

Proceedings Volume 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346916
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

Electrostatic discharge (ESD) due to electrostatic chuck (ESC) during ion implantation was observed in our fab. This defect could burn out the inter-layer dielectric and jeopardize the circuit performance. the yield impact on 0.35 micrometers product could be 40 percent. The defect distributed around the wafer edge and has a ring-type map. This defect occurred right after ESD implantation. The fringe field of the electrostatic chuck is the key reason why ring-type electrostatic discharge damage happened right after ion implantation. Our experimental result also showed that the junction characterization and surface conductivity will influence the probability of ESD damage caused by electrostatic chuck of ion implanter.

Citation Download Citation

Mingchu King, Chun-Keng Hsu, Chiang Fu, Hsin-Chie Huang, Shih-Yi Yang, Yuan-Lung Liu, and Kuo-chin Hsu "Ring-type ESD damage caused by electrostatic chuck of ion implanter", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346916

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