Paper
25 August 1999 Improvement of post-exposure delay stability of chemically amplified positive resist
Kohji Katoh, Kei Kasuya, Michiaki Hashimoto, Tadashi Arai, Toshio Sakamizu
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Abstract
We have been developing a novolak-based chemically amplified positive resist for next generation photomask (below 0.18 micrometer) fabrication. This resist prevents footing profile by use of a hydrophilic polyphenol compound. We succeeded in improving PED and PCD stability by addition of an ion- dissociative compound. We obtained vertical resist profiles on a chromium-oxide (CrOx) substrate. With the resist, we could make a well defined 0.25 micrometer line-and-space patterns on a CrOx substrate at a dose of 4.0 uC/cm2. Under the ambient air (amines concentration: 4 ppb, humidity: 45%), the line width change was less than 10 nm when the delay time between EB exposure and post-exposure-baking was from 0 to 8 hours. Under the same condition, the line width change was less than 20 nm even when the post-coating delay (PCD) time was 7 days.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kohji Katoh, Kei Kasuya, Michiaki Hashimoto, Tadashi Arai, and Toshio Sakamizu "Improvement of post-exposure delay stability of chemically amplified positive resist", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360200
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CITATIONS
Cited by 4 patents.
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KEYWORDS
Photomasks

Humidity

Interfaces

Photoresist processing

Scanning electron microscopy

Adsorption

Critical dimension metrology

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