1.9-GHz single balanced diode mixer fabricated on Al2O3 substrate by thin film technology

Yen-Heng Lin; Yi-Jen Chan

doi:10.1117/12.373013

13 December 1999 1.9-GHz single balanced diode mixer fabricated on Al₂O₃ substrate by thin film technology

Yen-Heng Lin, Yi-Jen Chan

Proceedings Volume 3861, Gigahertz Devices and Systems; (1999) https://doi.org/10.1117/12.373013
Event: Photonics East '99, 1999, Boston, MA, United States

Abstract

A passive balun using spiral inductors and inter-digital capacitors has been developed for a 1.9 GHz balanced diode mixer on Al₂O₃ substrates. Using this passive balun on the input port (RF port and LO port) of mixer circuit and incorporating the Schottky diode, where I-V model and small signal RF model have been established, a wideband signal balanced diode mixer was designed, fabricated and measured.

Citation Download Citation

Yen-Heng Lin and Yi-Jen Chan "1.9-GHz single balanced diode mixer fabricated on Al₂O₃ substrate by thin film technology", Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); https://doi.org/10.1117/12.373013

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