Fabrication of nanometer Schottky-tunneling MOSFETs by a novel silicide nanopatterning method

Qing Tai Zhao; L. Kappius; S. Mesters; Siegfried Mantl

doi:10.1117/12.360570

1 September 1999 Fabrication of nanometer Schottky-tunneling MOSFETs by a novel silicide nanopatterning method

Qing Tai Zhao, L. Kappius, S. Mesters, Siegfried Mantl

Proceedings Volume 3881, Microelectronic Device Technology III; (1999) https://doi.org/10.1117/12.360570
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

Nanometer Schottky-Tunneling MOSFETs which use Schottky contacts at both the source and the drain were fabricated by a novel epitaxial CoSi₂ silicide nanopatterning method. The nanopatterning process which is based on local oxidation of silicide layers, involves two key steps. First, a conventional oxidation mask of 20 nm SiO₂ and 300 nm Si₃N₄ was deposited by plasma enhanced chemical vapor deposition on CoSi₂/Si(100) and patterned by optical lithography and dry etching. Second, rapid thermal oxidation (RTO) was performed in dry oxygen. During RTO, the originally continuous silicide layer is separated near the edge of the nitride mask. Oxide formed on top of the gap and on the surface of the uncovered CoSi₂. Highly uniform gaps as narrow as 50nm between the masked and the unprotected regions of the silicide layer have been fabricated for 20nm thick CoSi₂ layers. N-channel Schottky-Tunneling MOSFETs with epitaxial CoSi₂ Schottky contacts at source and drain were fabricated using this nanopatterning method to make the 100nm gate. The devices show good I-V characteristics at 300K.

Citation Download Citation

Qing Tai Zhao, L. Kappius, S. Mesters, and Siegfried Mantl "Fabrication of nanometer Schottky-tunneling MOSFETs by a novel silicide nanopatterning method", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360570

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