Characterization of PECVD Ti process and development of a plasma-less chlorine clean for process repeatability in advanced DRAM manufacturing

Mohan Bhan; Fred H. Wu; R. A. Srinivas; Brian Metzger; Zvi Lando; Murali K. Narasimhan; Fusen E. Chen

doi:10.1117/12.361307

3 September 1999 Characterization of PECVD Ti process and development of a plasma-less chlorine clean for process repeatability in advanced DRAM manufacturing

Mohan Bhan, Fred H. Wu, R. A. Srinivas, Brian Metzger, Zvi Lando, Murali K. Narasimhan, Fusen E. Chen

Author Affiliations +

Proceedings Volume 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V; (1999) https://doi.org/10.1117/12.361307
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The TiCl4 based CVD-Ti process has been identified as the candidate of choice for the advanced contact metallization. A BKM wet clean recovery (WCR) procedure, involving extended chamber seasoning, has been developed for the CVD-Ti process. The new WCR methodology takes only 5 wafer processing to stabilize the CVD-Ti chamber condition and film properties. It has been found that a chamber seasoning for 200 sec, performed after every idle time (greater than 15 min.) and thermal periodic clean (at wafer count # 200), helps to maintain the CVD-Ti process performance. The reliability of the new chamber operating procedures was validated through a successful 3000 wafer marathon demonstration.

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Mohan Bhan, Fred H. Wu, R. A. Srinivas, Brian Metzger, Zvi Lando, Murali K. Narasimhan, and Fusen E. Chen "Characterization of PECVD Ti process and development of a plasma-less chlorine clean for process repeatability in advanced DRAM manufacturing", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361307

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