Femtosecond spectroscopy in doped GaN

Hong Ye; Gary W. Wicks; Philippe M. Fauchet

doi:10.1117/12.381464

28 March 2000 Femtosecond spectroscopy in doped GaN

Hong Ye, Gary W. Wicks, Philippe M. Fauchet

Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381464
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

A hot carrier relaxation dynamics are studied in both n-type and p-type GaN films grown on sapphire by molecular beam epitaxy. A novel femtosecond pump-probe technique is used in which the carriers are excited by an infrared pump and the carrier dynamics are monitored by a tunable near UV probe. Complex transients, showing bleaching and induced absorption, are observed in both samples. The electron dynamics are fitted by a model in which the LO-phonon emission is the dominant energy relaxation process. The hole dynamics also have been discussed and compared to the electron dynamics. Hot phonon effects seem play a major role to reduce the effective strength of the carrier-LO phonon scattering rate in both cases.

Citation Download Citation

Hong Ye, Gary W. Wicks, and Philippe M. Fauchet "Femtosecond spectroscopy in doped GaN", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); https://doi.org/10.1117/12.381464

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