Paper
2 June 2000 Use of intentional-defect wafers for tool inspection validation
Richard J. Jarvis, Christine Chua
Author Affiliations +
Abstract
Scan speed, defect capture, false and nuisance rate are just some of the important metrics used in evaluation inspection methodologies. With newer methodologies such as SEM-based inspection, it is difficult to find samples suitable to study these parameters as the nature of some of the defects in the sample cannot be characterized by other methods. It is for this reason that specific defects were designed and placed on a reticle set in both the array and the random logic areas of the device layout. At different layers, knowing exactly the number and placement of these 'intentional defects' allowed the assessment of scan speed, defect capture, false and nuisance rate at various process levels. This method provided a means of evaluating the inspection methodology as well as optimizing recipes to find the best capture rate at the optimum scan speeds.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard J. Jarvis and Christine Chua "Use of intentional-defect wafers for tool inspection validation", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386485
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Inspection

Logic

Metals

Scanning electron microscopy

Semiconducting wafers

Physics

Metrology

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