Feasibility of highly line-narrowed F2 laser for 157-nm microlithography

Alexander I. Ershov; Thomas P. Duffey; Eckehard D. Onkels; William N. Partlo; Richard L. Sandstrom

doi:10.1117/12.388992

5 July 2000 Feasibility of highly line-narrowed F₂ laser for 157-nm microlithography

Alexander I. Ershov, Thomas P. Duffey, Eckehard D. Onkels, William N. Partlo, Richard L. Sandstrom

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388992
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Highly line-narrowed F₂ laser operation in the VUV has been achieved for the first time by means of a master oscillator/power amplifier laser design. Different concepts have ben investigated experimentally for the master oscillator (MO) in order to obtain narrowband spectra. The diffraction grating based design showed to be limited to a FWHM of approximately 0.4 pm. The spectral FWHM of the MO could be further reduced to below 0.3 pm with a double etalon-based resonator. Single pass amplification was employed to increase the beam energy density of the beam up to 50 mJ/cm². The spectral FWHM of the amplified light is slightly larger than the FWHM of the correspondent MO radiation, indicating saturation and/or inhomogeneous broadening of the F₂ amplifier medium. Experimental data obtained from broadband operation and ASE measurements suggests that the free running bandwidth of F₂ lasers result form spectral gain-narrowing of the laser medium.

Citation Download Citation

Alexander I. Ershov, Thomas P. Duffey, Eckehard D. Onkels, William N. Partlo, and Richard L. Sandstrom "Feasibility of highly line-narrowed F₂ laser for 157-nm microlithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388992

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