Integration of InGaAsP/InP Laser With Field Effect Transistor (FET)

P. C. Chen; H. D. Law; E. Rezek; C. H. Lee; A. Carpenter

doi:10.1117/12.935719

30 November 1983 Integration of InGaAsP/InP Laser With Field Effect Transistor (FET)

P. C. Chen, H. D. Law, E. Rezek, C. H. Lee, A. Carpenter

Proceedings Volume 0408, Integrated Optics III; (1983) https://doi.org/10.1117/12.935719
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

Optoelectronic integration of an InGaAsP/InP laser is discussed. Low threshold buried heterostructure lasers on semi-insulating InP substrate and junction FETs compatible with integration are developed.

Citation Download Citation

P. C. Chen, H. D. Law, E. Rezek, C. H. Lee, and A. Carpenter "Integration of InGaAsP/InP Laser With Field Effect Transistor (FET)", Proc. SPIE 0408, Integrated Optics III, (30 November 1983); https://doi.org/10.1117/12.935719

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