Core structures of the edge dislocations in GaN epilayers

Junyong Kang

doi:10.1117/12.408410

29 November 2000 Core structures of the edge dislocations in GaN epilayers

Junyong Kang

Author Affiliations +

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408410
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Threading dislocations with edge components were investigated by a high-resolution transmission electron microscopy in undoped GaN epilayers grown on Al₂O₃ substrates. Two types of core images were observed. One is a fully filled core with regular contraction and expansion of diffraction bright dots and the other is incompletely filled with one bright dot less and irregular contraction and expansion of bright dots. The impurities around the cores were detected to contain oxygen and carbon elements by energy-dispersive x-ray spectrometer. This suggests that both types of dislocations be decorated with impurities.

Citation Download Citation

Junyong Kang "Core structures of the edge dislocations in GaN epilayers", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408410

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