Influence of nitrogen defects in AIN coverlayers on thermal stability of DyFeCo MO films

Rui Xiong; Wufeng Tang; Jing Shi; Deichen Tian

doi:10.1117/12.408306

29 November 2000 Influence of nitrogen defects in AIN coverlayers on thermal stability of DyFeCo MO films

Rui Xiong, Wufeng Tang, Jing Shi, Deichen Tian

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408306
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Thermal stability of amorphous DyFeCo films covered with non-stoichiometric AlN layer has been investigated. When RE- dominated films were annealed in air for 10 hours at 200 degree(s)C, the Kerr loops showed the characteristic of magnetic double-layered films. This behavior can be interpreted as follows: the reaction of diffusing N with Dy leads to a reduction of the magnetic active Dy content at the interface and created a very thin TM dominated DyFeCo layer between AlN and DyFeCo layer. This interpretation was demonstrated by XPS measurements.

Citation Download Citation

Rui Xiong, Wufeng Tang, Jing Shi, and Deichen Tian "Influence of nitrogen defects in AIN coverlayers on thermal stability of DyFeCo MO films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408306

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available