Paper
30 June 2000 Wannier-Stark localization of a strongly coupled asymmetric double-well GaAs/AlAs superlattice
Kenji Kawashima, Takeshi Matsumoto, Kiyotoku Arima, Takahiro Ohsumi, Takamitsu Nogami, Kazuo Satoh, Kenzo Fujiwara
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Abstract
A novel new type of superlattice (SL) structure which consists of strongly coupled asymmetric double-well (ADW) in one period have been investigated to introduce a new degree of freedom for the device funtionality. The GaAs/A1As ADS-SL contained in a p-i-n diode structure was grown by molecular beam epitaxy, and the electroabsorption properties were measured by low temperature photocurrent spectroscopy. It is found that the introduction of the confinement potential asymmetry with respect to electric field will lead to the selectivity of spatially indirect Stark-ladder transitions associated with two different types of the localized hole states, thus providing a new way of modulating the oscillator strengths. Assignment of the possible optical transitions from the miniband to the Stark-ladder regimes as a function of field strength is elucidated in detail by transfer matrix calculations.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenji Kawashima, Takeshi Matsumoto, Kiyotoku Arima, Takahiro Ohsumi, Takamitsu Nogami, Kazuo Satoh, and Kenzo Fujiwara "Wannier-Stark localization of a strongly coupled asymmetric double-well GaAs/AlAs superlattice", Proc. SPIE 4097, Complex Mediums, (30 June 2000); https://doi.org/10.1117/12.390590
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KEYWORDS
Stereolithography

Quantum wells

Superlattices

Fluctuations and noise

Modulation

Oscillators

Gallium arsenide

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