MEEF measurement and model verification for 0.3-k1 lithography

Colin R. Parker; Michael T. Reilly

doi:10.1117/12.395749

18 August 2000 MEEF measurement and model verification for 0.3-k1 lithography

Colin R. Parker, Michael T. Reilly

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395749
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

The concept of Mask Error Enhancement Factor (MEEF) is introduced its impact on the future of semiconductor fabrication is explained. The effects of numerical aperture, print bias, and exposure conditions of MEEF are explored using both theoretical and experimental methods.

Citation Download Citation

Colin R. Parker and Michael T. Reilly "MEEF measurement and model verification for 0.3-k1 lithography", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395749

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