Paper
23 August 2000 Real-time process control to prevent CD variation induced by postexposure delay
Chin-Yu Ku, Tan Fu Lei, Jia-Min Shieh, Tsann-Bim Chiou, Yung-Cheng Chen
Author Affiliations +
Abstract
One of the major problems for DUV resists is linewidth change owing to Post Exposure Delay (PED). Linewidth is mainly induced by acid diffusion during exposure and baking. Based on the mechanism of the neutralization of organic base and photo generated acid, a model had been generate din our previous study to describe the linewidth variation for different PED times. The derived equation can calculate the minimum elapse time, which will cause linewidth variation to exceed the specification of a specific CD. This work concludes that the smaller CD received a higher percentage of CD variation under PED for an isolated line pattern. Therefore, the minimum acceptable time for the smallest CD can be obtained based on +/- 10 percent of the nominal CD.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chin-Yu Ku, Tan Fu Lei, Jia-Min Shieh, Tsann-Bim Chiou, and Yung-Cheng Chen "Real-time process control to prevent CD variation induced by postexposure delay", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); https://doi.org/10.1117/12.410094
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Critical dimension metrology

Semiconducting wafers

Automatic control

Process control

Deep ultraviolet

Scanning electron microscopy

Diffusion

RELATED CONTENT


Back to Top