Controlling the quantum effects and erbium-carrier interaction using Si/SiO2 superlattices

Jung H. Shin; Ji-Hong Jhe; WonHee Lee; YongHo Ha; DaeWon Moon

doi:10.1117/12.424770

27 April 2001 Controlling the quantum effects and erbium-carrier interaction using Si/SiO2 superlattices

Jung H. Shin, Ji-Hong Jhe, WonHee Lee, YongHo Ha, DaeWon Moon

Proceedings Volume 4282, Rare-Earth-Doped Materials and Devices V; (2001) https://doi.org/10.1117/12.424770
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The Er³⁺ luminescent properties of Er-doped Si/SiO₂ superlattices are investigated. The superlattices were deposited either by electron cyclotron resonance plasma enhanced chemical vapor deposition or by ultra-high vacuum ion beam sputter deposition method and subsequently annealed at 950 degrees C. The thickness of the layers was varied 0.6 to 4.8 nm, and location of Er controlled within sub-nm. The structure and the composition of the films were confirmed using transmissions electron microscopy and medium energy ion spectroscopy. By carefully controlling the Si and SiO₂ layer thickness and the locations of Er, we demonstrate several orders of magnitude enhancement of Er³⁺ luminescence and suppression of de-excitation mechanisms. We also demonstrate fabrication of waveguides using Er-doped Si/SiO₂ superlattices, and discuss implications for possible applications.

Citation Download Citation

Jung H. Shin, Ji-Hong Jhe, WonHee Lee, YongHo Ha, and DaeWon Moon "Controlling the quantum effects and erbium-carrier interaction using Si/SiO2 superlattices", Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); https://doi.org/10.1117/12.424770

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