High-power long-wavelength lasers using GaAs-based quantum dots

Nikolai N. Ledentsov; Victor M. Ustinov; Vitaly A. Shchukin; Dieter Bimberg; James A. Lott; Zhores I. Alferov

doi:10.1117/12.429786

6 June 2001 High-power long-wavelength lasers using GaAs-based quantum dots

Nikolai N. Ledentsov, Victor M. Ustinov, Vitaly A. Shchukin, Dieter Bimberg, James A. Lott, Zhores I. Alferov

Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429786
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Continuous wave room-temperature output power of approximately 3 W for edge-emitters and of about 1 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 micrometers . Long operation lifetimes are manifested. The breakthrough became possible due to development of self- organized growth and defect-reduction techniques in QD technology. We show that the basic parameters of QD lasers outperform the parameters of the devices fabricated using competing GaAs-based `quantum well' technologies.

Citation Download Citation

Nikolai N. Ledentsov, Victor M. Ustinov, Vitaly A. Shchukin, Dieter Bimberg, James A. Lott, and Zhores I. Alferov "High-power long-wavelength lasers using GaAs-based quantum dots", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429786

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