Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate

Matthew Erdtmann; Manijeh Razeghi

doi:10.1117/12.429426

12 June 2001 Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate

Matthew Erdtmann, Manijeh Razeghi

Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429426
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Using low-pressure metalorganic chemical vapor deposition, we have grown GaInAs/InP QWIP structures on GaAs-coated Si substrate. First, the procedure to optimize the epitaxy of the InP buffer layer on Si substrate is given. Excellent crystallinity and a mirror-like surface morphology were obtained by using both a two-step growth process at the beginning of the InP buffer layer growth and several series of thermal cycle annealing throughout the InP buffer layer growth. Second, results of fabricated GaInAs/InP QWIPs on Si substrate are presented. At a temperature of 80 K, the peak response wavelength occurs at 7.4 micrometers . The responsivities of QWIPs on both Si and InP substrates with identical structures are equal up to biases of 1.5 V. At a bias of 3 V, the responsivity of the QWIPs on Si substrate is 1.0 A/W.

Citation Download Citation

Matthew Erdtmann and Manijeh Razeghi "Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429426

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