Novel multiple lateral polysilicon p+-n-n+ and p+-p-n+ diodes

Sooraj V. Karnik; Susan Alexander; William Bruce Jr.; Miltiadis K. Hatalis

doi:10.1117/12.424865

30 April 2001 Novel multiple lateral polysilicon p⁺-n-n⁺ and p⁺-p-n⁺ diodes

Sooraj V. Karnik, Susan Alexander, William Bruce Jr., Miltiadis K. Hatalis

Proceedings Volume 4295, Flat Panel Display Technology and Display Metrology II; (2001) https://doi.org/10.1117/12.424865
Event: Photonics West 2001 - Electronic Imaging, 2001, San Jose, CA, United States

Abstract

Lateral polysilicon p⁺-n-n⁺ and p⁺-p- n⁺ diodes in a series combination of 2 to 5 were fabricated and their electronic properties such as ON- resistance, reverse current and ideality factor were studied. Since the multiple diodes are in series with each other, they have a reduced reverse current. Such a series combination can be used as a single device in applications such as x-ray sensing arrays, which need switching devices with reverse current lower than 1 by 10^-12 A and forward current more than 1 by 10^-6 A. The ON- resistance and the ideality facto increase linearly with the number of diodes in series. This behavior is attributed to the effect of series combination of diodes.

Citation Download Citation

Sooraj V. Karnik, Susan Alexander, William Bruce Jr., and Miltiadis K. Hatalis "Novel multiple lateral polysilicon p⁺-n-n⁺ and p⁺-p-n⁺ diodes", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); https://doi.org/10.1117/12.424865

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