IBM 193-nm bilayer resist: materials, lithographic performance, and optimization

Ranee W. Kwong; Pushkara Rao Varanasi; Margaret C. Lawson; Timothy Hughes; George M. Jordhamo; Mahmoud Khojasteh; Arpan P. Mahorowala; Ratnam Sooriyakumaran; Phillip J. Brock; Carl E. Larson; Debra Fenzel-Alexander; Hoa D. Truong; Robert D. Allen

doi:10.1117/12.436892

24 August 2001 IBM 193-nm bilayer resist: materials, lithographic performance, and optimization

Ranee W. Kwong, Pushkara Rao Varanasi, Margaret C. Lawson, Timothy Hughes, George M. Jordhamo, Mahmoud Khojasteh, Arpan P. Mahorowala, Ratnam Sooriyakumaran, Phillip J. Brock, Carl E. Larson, Debra Fenzel-Alexander, Hoa D. Truong, Robert D. Allen

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436892
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

193nm lithography will be the future technology for sub- 150nm resolution. As the dimensions get smaller, resist thickness is also needed to be reduced for better resolution and wider process window. Single layer 193nm resist, with thickness of less than 500nm, may not be able to satisfy some of the substrate etch requirement. With bilayer resist scheme, the thin resist offers the advantages of high resolution and good process window. The thick underlayer provides the etch resistance required for substrate etching. IBM has developed a silane substituted alternating copolymer based 193nm bilayer resist system and demonstrates sub-120nm resolution using Nikon 0.6NA stepper with Chrome on Glass (COG) mask. Lithographic performance and formulation optimizations of this 193nm bilayer resist as well as underlayer evaluation and some etch study will be discussed.

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Ranee W. Kwong, Pushkara Rao Varanasi, Margaret C. Lawson, Timothy Hughes, George M. Jordhamo, Mahmoud Khojasteh, Arpan P. Mahorowala, Ratnam Sooriyakumaran, Phillip J. Brock, Carl E. Larson, Debra Fenzel-Alexander, Hoa D. Truong, and Robert D. Allen "IBM 193-nm bilayer resist: materials, lithographic performance, and optimization", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436892

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