Toward 0.1-um contact hole process by using water-soluble organic overcoating material (WASOOM)-- Resist flow technology III: study on WASOOM, top flare, and etch characterization

Jun-Sung Chun; Chang Ho Maeng; Mark R Tesauro; John L. Sturtevant; Joseph E. Oberlander; Andrew R. Romano; John P. Sagan; Ralph R. Dammel

doi:10.1117/12.436898

24 August 2001 Toward 0.1-μm contact hole process by using water-soluble organic overcoating material (WASOOM)-- Resist flow technology III: study on WASOOM, top flare, and etch characterization

Jun-Sung Chun, Chang Ho Maeng, Mark R Tesauro, John L. Sturtevant, Joseph E. Oberlander, Andrew R. Romano, John P. Sagan, Ralph R. Dammel

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436898
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

In our previous experiment for sub-0.15micrometers contact hole, we used water-soluble organic over-coating material (for short: WASOOM) as a barrier layer to distribute thermal stress evenly from top to bottom of contact hole resist. It is assumed that WASOOM inside a contact hole will be acting as a barrier layer (or buffer) so that overhang can be reduced. In this paper we will describe a 0.1micrometers contact hole process with well controlled DICD and good etch profile. In order to get a good WASOOM for this study, lots of water soluble polymers have been evaluated. Our methods for resist flow technique use WASOOM's property that it should not react with photoresist at high temperature. The criteria and chemistry of good WASOOM materials will be described for further study. In addition to WASOOM material, we will also explain the results of top flare by using PVP based WASOOM and appropriate etch processes. For etching characterization, we used C₅F₈ chemistry for the initial study and then later on it is found that there is some etch stop issue which appears related to surface carbon contamination of the etch front coming from C₅F₈. This surface contamination issue will be also investigated. Mixed C₅F₉/CF₄ chemistry was introduced to make a more robust etching process. This uses the carbon polymerization of C₅F₈ for good etching profile and adds a small portion of CF₄ to generate radical CF species which will prevent etch stop.

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Jun-Sung Chun, Chang Ho Maeng, Mark R Tesauro, John L. Sturtevant, Joseph E. Oberlander, Andrew R. Romano, John P. Sagan, and Ralph R. Dammel "Toward 0.1-μm contact hole process by using water-soluble organic overcoating material (WASOOM)-- Resist flow technology III: study on WASOOM, top flare, and etch characterization", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436898

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