Paper
26 April 2001 Continuum model of shot noise and line edge roughness
Gregg M. Gallatin
Author Affiliations +
Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425198
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
Decreasing feature size implies increased sensitivity to statistical fluctuations which impact critical dimension uniformity and control. In a recent work Gallatin and Liddle presented equations which describe the basic processes leading to surface and line edge roughness in a chemically amplified resists. Retaining only the lowest order terms in what is inherently a very nonlinear problem they were able to derive a scaling law and other dependencies which show reasonable agreement with experimental data. Here the analysis of the same equations is extended and expanded to include the dominant nonlinear effects.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregg M. Gallatin "Continuum model of shot noise and line edge roughness", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425198
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Cited by 8 scholarly publications.
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KEYWORDS
Line edge roughness

Surface roughness

Particles

Statistical analysis

Semiconducting wafers

Chemical analysis

Statistical modeling

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