Microwave frequency acoustic resonators implemented on monolithic Si/AIN substrates

Cinzia Caliendo; Enrico Verona; Alessandro Cimmino

doi:10.1117/12.425331

30 April 2001 Microwave frequency acoustic resonators implemented on monolithic Si/AIN substrates

Cinzia Caliendo, Enrico Verona, Alessandro Cimmino

Proceedings Volume 4407, MEMS Design, Fabrication, Characterization, and Packaging; (2001) https://doi.org/10.1117/12.425331
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

Basing on the performances of high quality AlN piezoelectric films, acoustic resonators exploiting the propagation of both surface and bulk waves (SAW, BAW) and operating at microwave frequencies have been studied and experimented. Because of the high values of the acoustic wave velocities in both AlN and Si substrates, high frequency operations can be easily achieved. The expected frequency limit can be so high as 5 GHz and 10 - 15 GHz for SAW and BAW devices, respectively.

Citation Download Citation

Cinzia Caliendo, Enrico Verona, and Alessandro Cimmino "Microwave frequency acoustic resonators implemented on monolithic Si/AIN substrates", Proc. SPIE 4407, MEMS Design, Fabrication, Characterization, and Packaging, (30 April 2001); https://doi.org/10.1117/12.425331

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