Paper
5 September 2001 Improvement of NLD mask dry etching system
Tatsuya Fujisawa, Nobuyuki Yoshioka, Takaei Sasaki, Kazuhide Yamashiro
Author Affiliations +
Abstract
An advanced photomask dry etching system (NLDE-9035) has been evaluated. The NLD plasma has an advantage to have a capability to control the plasma distribution and density. In our previous work, it has been confirmed to obtain excellent CD uniformity, CD linearity and good pattern fidelity. To improve the CD uniformity further, the neutral loop modulation etching technique has been evaluated. As a result, a further improvement of CD uniformity has been confirmed by using neutral loop (NL) diameter modulation etching technique.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuya Fujisawa, Nobuyuki Yoshioka, Takaei Sasaki, and Kazuhide Yamashiro "Improvement of NLD mask dry etching system", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438356
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Modulation

Magnetism

Dry etching

Photomasks

Plasma

Antennas

RELATED CONTENT

Development of photomask fabrication for 100-nm design rule
Proceedings of SPIE (January 22 2001)
Evaluation of loading effect of NLD dry etching: II
Proceedings of SPIE (January 22 2001)
Evaluation of loading effect of NLD dry etching
Proceedings of SPIE (July 19 2000)
Mask-making study for the 65-nm node
Proceedings of SPIE (December 17 2003)
Advanced NLD mask dry etching system for 90 nm node...
Proceedings of SPIE (August 28 2003)
Improvement of NLD mask dry etching system for 100 nm...
Proceedings of SPIE (December 27 2002)

Back to Top