FEA modeling of a thermally excited silicon-beam resonant pressure sensor

Deyong Chen; Dafu Cui; Li Wang; Zhongyao Yu; Zheng Cui; Shanhong Xia

doi:10.1117/12.440192

14 September 2001 FEA modeling of a thermally excited silicon-beam resonant pressure sensor

Deyong Chen, Dafu Cui, Li Wang, Zhongyao Yu, Zheng Cui, Shanhong Xia

Author Affiliations +

Proceedings Volume 4414, International Conference on Sensor Technology (ISTC 2001); (2001) https://doi.org/10.1117/12.440192
Event: International Conference on Sensing units and Sensor Technology, 2001, Wuhan, China

Abstract

FEA modeling of a thermally-excited silicon beam resonant pressure sensor is presented. The sensor consists of two bonded silicon chips, one with an etched beam and another with an etched diaphragm. FEA modeling is carried out on temperature distribution, resonant frequency shift due to thermal stress, effect of heater/detector elements on the natural resonance frequency, design of diaphragm geometry, and sensitivity of pressure measurement. The resonant pressure sensor samples are realized by silicon micromachining are measured. There is a satisfactory agreement between theory and experiments.

Citation Download Citation

Deyong Chen, Dafu Cui, Li Wang, Zhongyao Yu, Zheng Cui, and Shanhong Xia "FEA modeling of a thermally excited silicon-beam resonant pressure sensor", Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); https://doi.org/10.1117/12.440192

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