Stress relaxation of the micromachined coplanar waveguide

Yanling Shi; Zongsheng Lai; Peisheng Xin

doi:10.1117/12.440196

14 September 2001 Stress relaxation of the micromachined coplanar waveguide

Yanling Shi, Zongsheng Lai, Peisheng Xin

Proceedings Volume 4414, International Conference on Sensor Technology (ISTC 2001); (2001) https://doi.org/10.1117/12.440196
Event: International Conference on Sensing units and Sensor Technology, 2001, Wuhan, China

Abstract

Micromachined microwave coplanar waveguides were fabricated in standard CMOS technology and the hybrid etch technology. The coplanar waveguides have been suspend from the silicon substrate and third insertion loss was greatly improved. When fabricating the micromachined structures on a (100) wafer, stress was relaxed because of the different thermal expansion coefficients between silicon and SiO₂ dielectric. This caused this structures deformed. Among all etching pattern we had adopted, the etching orientation along the (100) line of the wafer obtained the smaller stress relaxation, but costing the longest etching time. ON the other hand, the space between the open areas for etching needs to be designed carefully to obtain the best mechanical and electrical properties.

Citation Download Citation

Yanling Shi, Zongsheng Lai, and Peisheng Xin "Stress relaxation of the micromachined coplanar waveguide", Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); https://doi.org/10.1117/12.440196

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