Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography

Janis Teteris; Ilona Kuzmina

doi:10.1117/12.425513

10 April 2001 Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography

Janis Teteris, Ilona Kuzmina

Proceedings Volume 4415, Optical Organic and Inorganic Materials; (2001) https://doi.org/10.1117/12.425513
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As₂S₃ thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.

Citation Download Citation

Janis Teteris and Ilona Kuzmina "Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography", Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); https://doi.org/10.1117/12.425513

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