RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability

John M. Dell; Jarek Antoszewski; J. K. White; Ravindra Pal; Thuyen Nguyen; Charles A. Musca; Lorenzo Faraone

doi:10.1117/12.448166

12 November 2001 RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability

John M. Dell, Jarek Antoszewski, J. K. White, Ravindra Pal, Thuyen Nguyen, Charles A. Musca, Lorenzo Faraone

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448166
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Reactive ion etching (RIE) of HgCdTe using CH4:H2 is known to generate p- to n-type conversion in both intrinsically doped and extrinsically doped p-type HgCdTe. The use of RIE to form n-on-p junctions in planar diodes has a number of advantages including state of the art diode performance, high uniformity, passivation of the junction at the surface throughout processing, the possibility of the formation of deep junctions, and removal of any need for high temperature processing after junction formation. However, it has long been believed that H₂ based plasma junction formation techniques will be long-term unstable. Initial results are presented indicating that surface passivation plays a major role in determining the stability of planar junctions formed using H2 based RIE. Comparisons of ZnS and CdTe passivation for n-on p-junctions formed on x approximately 0.3 Hg_1-xCd_xTe show dramatic differences in 2 to 3 hour, 80 degrees C bake stability tests. Diodes fabricated using either passivant initially exhibit R0A performance close to the theoretical limit, but are degraded after a 2 hour, 80 degrees C bake. Diodes with CdTe passivation have moderate performance as fabricated, but exhibit improvement rather than degradation after 3 hour, 80 degrees C bake. Such results indicate that planar junctions formed using H2 based RIE may offer a viable technology for low cost, highly uniform, large area IR detector arrays if passivation issues are satisfactorily resolved. Finally, a dual layer ZnS/CdTe passivation process is introduced which results in bake-stable devices after a 17 hour, 80 degrees C bake.

Citation Download Citation

John M. Dell, Jarek Antoszewski, J. K. White, Ravindra Pal, Thuyen Nguyen, Charles A. Musca, and Lorenzo Faraone "RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448166

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available