Development of high-average power picosecond laser systems

David Burns; Gareth J. Valentine; W. Lubeigt; Erwin A. Bente; Allister I. Ferguson

doi:10.1117/12.469492

6 June 2002 Development of high-average power picosecond laser systems

David Burns, Gareth J. Valentine, W. Lubeigt, Erwin A. Bente, Allister I. Ferguson

Proceedings Volume 4629, Laser Resonators and Beam Control V; (2002) https://doi.org/10.1117/12.469492
Event: High-Power Lasers and Applications, 2002, San Jose, California, United States

Abstract

The use of semiconductor saturable absorbers has emerged as an enabling technology in modern passively modelocked laser systems. Their application to high power picosecond lasers, most notably Nd-doped lasers, has produced systems with average power levels of a few tens of watts. In this paper, the development of these laser systems to the 100W level and above will be outlined.

Citation Download Citation

David Burns, Gareth J. Valentine, W. Lubeigt, Erwin A. Bente, and Allister I. Ferguson "Development of high-average power picosecond laser systems", Proc. SPIE 4629, Laser Resonators and Beam Control V, (6 June 2002); https://doi.org/10.1117/12.469492

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available