Dislocation-engineered silicon light-emitting diodes

Manon A. Lourenco; Wei Lek Ng; Gousheng Shao; Russell M. Gwilliam; Kevin P. Homewood

doi:10.1117/12.463848

27 March 2002 Dislocation-engineered silicon light-emitting diodes

Manon A. Lourenco, Wei Lek Ng, Gousheng Shao, Russell M. Gwilliam, Kevin P. Homewood

Proceedings Volume 4654, Silicon-based and Hybrid Optoelectronics IV; (2002) https://doi.org/10.1117/12.463848
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Efficient silicon-based light emitting diodes have been fabricated using a recently developed approach - dislocation engineering. Crucially this technique uses entirely conventional ULSI processes. The devices were fabricated by conventional low energy boron implantation into silicon substrates followed by high temperature rapid thermal annealing. Strong silicon band edge luminescence was observed. Electroluminescence emissions with an efficiency greater than 2 X 10^-4 at rom temperature were measured; the device lifetime was found to be approximately 18 microsecond(s) . The luminescence integrated intensity varied with the device fabrication conditions. In this paper we discuss the influence of processing conditions on the luminescence emissions.

Citation Download Citation

Manon A. Lourenco, Wei Lek Ng, Gousheng Shao, Russell M. Gwilliam, and Kevin P. Homewood "Dislocation-engineered silicon light-emitting diodes", Proc. SPIE 4654, Silicon-based and Hybrid Optoelectronics IV, (27 March 2002); https://doi.org/10.1117/12.463848

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