Sub-100 nm T-gates utilizing a single E-beam lithography exposure process

Eric S. Ainley; Scott Ageno; Kevin J. Nordquist; Douglas J. Resnick

doi:10.1117/12.474192

24 July 2002 Sub-100 nm T-gates utilizing a single E-beam lithography exposure process

Eric S. Ainley, Scott Ageno, Kevin J. Nordquist, Douglas J. Resnick

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474192
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Sub 100 nm T-gate structures have been produced using a tri- level resist stack modified from previously published results utilizing ZEP7000A, PMGI and ZEP520A positive e-beam resists. The new resist stack replaces the top resist with the more sensitive ZEP7000A from Zeon Chemical. The does sensitivity of the ZEP1000A is an order of magnitude higher than the ZEP520A. This difference provides the flexibility to create T-gate structures with larger top cross-sectional dimensions, which increase the transconductance. The technique can also be used to create other novel structures such as gamma-gates and small air bridges, by varying the dose on the different parts of a feature design to achieve the desired three-dimensional resist structure.

Citation Download Citation

Eric S. Ainley, Scott Ageno, Kevin J. Nordquist, and Douglas J. Resnick "Sub-100 nm T-gates utilizing a single E-beam lithography exposure process", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474192

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