Parameters Affecting The Ability To Align Aluminum Layers On An Optical Wafer Stepper

Hiroshi Ohtsuka; Hiroyuki Funatsu; Gohoichi Kushibiki; Toshiaki Koikeda

doi:10.1117/12.941890

29 June 1984 Parameters Affecting The Ability To Align Aluminum Layers On An Optical Wafer Stepper

Hiroshi Ohtsuka, Hiroyuki Funatsu, Gohoichi Kushibiki, Toshiaki Koikeda

Proceedings Volume 0470, Optical Microlithography III: Technology for the Next Decade; (1984) https://doi.org/10.1117/12.941890
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Very high registration accuracy is required for 5:1 wafer steppers used in V-LSI production. The image quality of an alignment mark is affected by illumination wavelength, photoresist thickness, light absorption in the photoresist, and by the characteristics of the alignment mark itself. Reflection Modeling and image profile analysis are applied to evaluate the influence of the alignment geometry and image quality on the ability to align the wafer. As a result of this study, ideal image quality is observed by optimization of the step height, and the influence of background noise is studied on rough aluminum surfaces. Degradation of the image profile and edge contrast are observed on rough aluminum surfaces.

Citation Download Citation

Hiroshi Ohtsuka, Hiroyuki Funatsu, Gohoichi Kushibiki, and Toshiaki Koikeda "Parameters Affecting The Ability To Align Aluminum Layers On An Optical Wafer Stepper", Proc. SPIE 0470, Optical Microlithography III: Technology for the Next Decade, (29 June 1984); https://doi.org/10.1117/12.941890

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