Comparative evaluation of e-beam sensitive chemically amplified resists for mask making

Mathias Irmscher; Dirk Beyer; Joerg Butschke; Chris Constantine; Thomas Hoffmann; Corinna Koepernik; Christian Krauss; Bernd Leibold; Florian Letzkus; Dietmar Mueller; Reinhard Springer; Peter Voehringer

doi:10.1117/12.476944

1 August 2002 Comparative evaluation of e-beam sensitive chemically amplified resists for mask making

Mathias Irmscher, Dirk Beyer, Joerg Butschke, Chris Constantine, Thomas Hoffmann, Corinna Koepernik, Christian Krauss, Bernd Leibold, Florian Letzkus, Dietmar Mueller, Reinhard Springer, Peter Voehringer

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476944
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

Positive tone chemically amplified resists CAP209, EP012M (TOK), KRS-XE (JSR) and FEP171 (Fuji) were evaluated for mask making. The investigations were performed on an advanced tool set comprising of a Steag coater ASR5000, Steag developer ASP5000, 50kV e-beam writer Leica SB350, UNAXIS MASK ETCHER III , STS ICP silicon etcher and a CD-SEM KLA8100. We investigated and compared resolution, sensitivity, resist slope, dark field loss, CD-uniformity, line edge roughness, and etch resistance of the evaluated resists. Furthermore, the influence of post coating delay, post exposure delay and other process parameters on the resist performance was determined.

Citation Download Citation

Mathias Irmscher, Dirk Beyer, Joerg Butschke, Chris Constantine, Thomas Hoffmann, Corinna Koepernik, Christian Krauss, Bernd Leibold, Florian Letzkus, Dietmar Mueller, Reinhard Springer, and Peter Voehringer "Comparative evaluation of e-beam sensitive chemically amplified resists for mask making", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476944

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