Semiconductor nanowire array

Peidong Yang

doi:10.1117/12.472986

24 June 2002 Semiconductor nanowire array

Peidong Yang

Proceedings Volume 4806, Complex Mediums III: Beyond Linear Isotropic Dielectrics; (2002) https://doi.org/10.1117/12.472986
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

A novel vapor-liquid-solid epitaxy (VLSE) process has been developed to synthesize high-density semiconductor nanowire arrays. The nanowires generally are single crystalline and have diameters of 10-200 nm and aspect ratios of 10-100. The areal density of the array can be readily approach 10¹⁰ cm^-2. Results based on Si and ZnO nanowire systems are reported here.

Citation Download Citation

Peidong Yang "Semiconductor nanowire array", Proc. SPIE 4806, Complex Mediums III: Beyond Linear Isotropic Dielectrics, (24 June 2002); https://doi.org/10.1117/12.472986

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available