Paper
29 July 2002 Residual reflectivity of amplification media for extended-cavity laser
B. Ruzicka, Josef Lazar, O. Wilfert, Pavel Pokorny
Author Affiliations +
Proceedings Volume 4900, Seventh International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life; (2002) https://doi.org/10.1117/12.484579
Event: Seventh International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life, 2002, Novosibirsk, Russian Federation
Abstract
This paper presents experimental results obtained by a deposition double-layer system made by means of the electron-beam vacuum evaporation technique. We used short-wavelength 633 -635 nm laser diodes. The wavelengths of these devices are close to the wavelengths of traditional He-Ne lasers. We use them in an extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring the "modulation depth" of the coated diode emission spectra. Our best results were obtained for reflectivities well below 10-4 and repeatability ofthe deposition process in a range not exceeding 2x10-4.
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B. Ruzicka, Josef Lazar, O. Wilfert, and Pavel Pokorny "Residual reflectivity of amplification media for extended-cavity laser", Proc. SPIE 4900, Seventh International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life, (29 July 2002); https://doi.org/10.1117/12.484579
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KEYWORDS
Reflectivity

Semiconductor lasers

Diodes

Antireflective coatings

Deposition processes

Lithium

Refraction

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