Circuit modeling approach for quantum-structured total internal reflection electro-optic switch and fabric

Rangaswany Nakkeeran; T. G. Palanivelu; Pantony Gnanaraj

doi:10.1117/12.482256

3 September 2002 Circuit modeling approach for quantum-structured total internal reflection electro-optic switch and fabric

Rangaswany Nakkeeran, T. G. Palanivelu, Pantony Gnanaraj

Author Affiliations +

Proceedings Volume 4907, Optical Switching and Optical Interconnection II; (2002) https://doi.org/10.1117/12.482256
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

Ultra high-speed optical switches (< 10 ns) are more important in optical networks and optical computers. This paper analyzes the switching speed and insertion loss of (2 x 2) Total Internal Reflection (TIR) electro — optic switch in Multiple Quantum Well (MQW) and Quantum Dot (QD) structures using equivalent circuit model approach. Then extended to analyze the switching speed and insertion loss of switch fabric (Spanke Architecture). For the purpose of this study, AlGaAs/ GaA° multiple quantum well stmcture of length 150 micrometer and width of 40 micrometer and InAs quantum dot of 100 K diameter are considered. This work is carried out with SABER Sketch (ver.4.2.3) package. It is found that the obtained switching speed of both quantum dot switch and fabric are improved by a factor of 1000 (from the order of nano seconds to femto seconds) and insertion loss reduced by a factor of 1000 (from the order of dBm to dBµ) while comparing to quantum well switch and fabric. Also noticed that the operating speed of the switch fabric is relatively oscillatory when the number of switch fabric stage is less than four.

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Rangaswany Nakkeeran, T. G. Palanivelu, and Pantony Gnanaraj "Circuit modeling approach for quantum-structured total internal reflection electro-optic switch and fabric", Proc. SPIE 4907, Optical Switching and Optical Interconnection II, (3 September 2002); https://doi.org/10.1117/12.482256

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