Paper
3 July 2003 Light extraction technologies for high-efficiency GaInN-LED devices
Volker Haerle, Berthold Hahn, Stephan Kaiser, Andreas Weimar, Dominik Eisert, Stefan Bader, Andreas Ploessl, Franz Eberhard
Author Affiliations +
Abstract
Data are presented for an GaInN based thinfilm LED. The LED is fabricated by transferring the epilayers with laser lift off from sapphire to a GaAs host substrate. In combination with efficient surface roughening and highly reflective p-mirror metallisation an extraction efficiency of 70% and wall plug efficiency of 24% at 460nm have been shown. The chips showed 12mW @ 20mA with a Voltage of 3.2V. The technology is scalable from small size LEDs to high current Chips and is being transferred to mass production.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Volker Haerle, Berthold Hahn, Stephan Kaiser, Andreas Weimar, Dominik Eisert, Stefan Bader, Andreas Ploessl, and Franz Eberhard "Light extraction technologies for high-efficiency GaInN-LED devices", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); https://doi.org/10.1117/12.476591
Lens.org Logo
CITATIONS
Cited by 23 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light emitting diodes

Quantum wells

Gallium arsenide

Laser liftoff

Manufacturing

Reflectivity

RGB color model

Back to Top