Paper
11 June 2003 Effective mass anisotropy of T-electrons in GaAs/AlGaAs quantum well with InAs layer
E. E. Vdovin, Yu N. Khanin, Yu V. Dubrovskii, Laurence Eaves, P. C. Main, Mohamed Henini, Geoff Hill
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Abstract
We use resonant magnetotunneling spectroscopy, with the magnetic field applied parallel to the interfaces, to investigate the local band structure in the quantum well (QW) of a resonant tunneling diode. By rotating the magnetic field in the plane of the interfaces, we investigate the energy surface at constant k||. Using this technique, we have studied two different types of double barrier structures. We obtain different results depending on whether or not the QW contains a narrow InAs layer.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. E. Vdovin, Yu N. Khanin, Yu V. Dubrovskii, Laurence Eaves, P. C. Main, Mohamed Henini, and Geoff Hill "Effective mass anisotropy of T-electrons in GaAs/AlGaAs quantum well with InAs layer", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513844
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KEYWORDS
Quantum wells

Anisotropy

Indium arsenide

Interfaces

Gallium arsenide

Magnetism

Electrons

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